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E2G0051-17-41
Semiconductor MSM5118160B
Semiconductor
This version: Jan. 1998 MSM5118160B Previous version: May 1997
1,048,576-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM5118160B is a 1,048,576-word 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5118160B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5118160B is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP.
FEATURES
* 1,048,576-word 16-bit configuration * Single 5 V power supply, 10% tolerance * Input : TTL compatible, low input capacitance * Output : TTL compatible, 3-state * Refresh : 1024 cycles/16 ms * Fast page mode, read modify write capability * CAS before RAS refresh, hidden refresh, RAS-only refresh capability * Package options: 42-pin 400 mil plastic SOJ (SOJ42-P-400-1.27) (Product : MSM5118160B-xxJS) 50/44-pin 400 mil plastic TSOP (TSOPII50/44-P-400-0.80-K) (Product : MSM5118160B-xxTS-K) (TSOPII50/44-P-400-0.80-L) (Product : MSM5118160B-xxTS-L) xx indicates speed rank.
PRODUCT FAMILY
Family MSM5118160B-50 MSM5118160B-60 MSM5118160B-70 Access Time (Max.) tRAC tAA tCAC tOEA 50 ns 25 ns 13 ns 13 ns 60 ns 30 ns 15 ns 15 ns 70 ns 35 ns 20 ns 20 ns Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 90 ns 110 ns 130 ns 990 mW 880 mW 770 mW 5.5 mW
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Semiconductor
PIN CONFIGURATION (TOP VIEW)
VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 VCC 6 DQ5 7 DQ6 8 DQ7 9 DQ8 10 NC 11 NC 12 WE 13 RAS 14 NC 15 NC 16 A0 17 A1 18 A2 19 A3 20 VCC 21 42 VSS VCC 1

MSM5118160B
50 VSS VSS 50 1 VCC 41 DQ16 40 DQ15 39 DQ14 38 DQ13 37 VSS 36 DQ12 35 DQ11 34 DQ10 33 DQ9 32 NC DQ1 2 DQ2 3 DQ3 4 DQ4 5 VCC 6 DQ5 7 DQ6 8 DQ7 9 49 DQ16 DQ16 49 48 DQ15 DQ15 48 47 DQ14 DQ14 47 46 DQ13 DQ13 46 45 VSS VSS 45 44 DQ12 DQ12 44 43 DQ11 DQ11 43 42 DQ10 DQ10 42 41 DQ9 40 NC DQ9 41 NC 40 2 DQ1 3 DQ2 4 DQ3 5 DQ4 6 VCC 7 DQ5 8 DQ6 9 DQ7 DQ8 10 NC 11 10 DQ8 11 NC 31 LCAS 29 OE 28 A9 27 A8 26 A7 25 A6 24 A5 23 A4 22 VSS NC 15 NC 16 WE 17 RAS 18 NC 19 NC 20 A0 21 A1 22 A2 23 A3 24 VCC 25 36 NC 35 LCAS 33 OE 32 A9 31 A8 30 A7 29 A6 28 A5 27 A4 26 VSS NC 36 LCAS 35 OE 33 A9 32 A8 31 A7 30 A6 29 A5 28 A4 27 VSS 26 15 NC 16 NC 17 WE 18 RAS 19 NC 20 NC 21 A0 22 A1 23 A2 24 A3 25 VCC 30 UCAS 34 UCAS UCAS 34
42-Pin Plastic SOJ
50/44-Pin Plastic TSOP (K Type)
50/44-Pin Plastic TSOP (L Type)
Pin Name A0 - A9 RAS LCAS UCAS DQ1 - DQ16 OE WE VCC VSS NC
Function Address Input Row Address Strobe Lower Byte Column Address Strobe Upper Byte Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (5 V) Ground (0 V) No Connection
Note :
The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin. 2/16
Semiconductor
MSM5118160B
BLOCK DIAGRAM
WE RAS LCAS UCAS
Column Address Buffers Internal Address Counter Row Address 10 Buffers Timing Generator I/O Controller I/O Controller
10 10 8
OE
Output Buffers
8
DQ1 - DQ8
8
Column Decoders
Input Buffers
8
A0 - A9
Refresh Control Clock
Sense Amplifiers
16
I/O Selector
16
8 10
Input Buffers
8
Row Decoders
Word Drivers
Memory Cells
8
DQ9 - DQ16
Output Buffers
8
VCC
On Chip VBB Generator On Chip IVCC Generator
VSS
FUNCTION TABLE
Input Pin RAS H L L L L L L L L LCAS * H L H L L H L L UCAS * H H L L H L L L WE * * H H H L L L H OE * * L L L H H H H High-Z High-Z DOUT High-Z DOUT DIN Don't Care DIN High-Z DQ Pin DQ1 - DQ8 DQ9 - DQ16 High-Z High-Z High-Z DOUT DOUT Don't Care DIN DIN High-Z Function Mode Standby Refresh Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write --
*: "H" or "L"
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Semiconductor
MSM5118160B
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VIN, VOUT VCC IOS PD* Topr Tstg Rating -0.5 to VCC + 0.5 -0.5 to 7 50 1 0 to 70 -55 to 150 Unit V V mA W C C
*: Ta = 25C Recommended Operating Conditions
(Ta = 0C to 70C) Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 4.5 0 2.4 -0.5*2 Typ. 5.0 0 -- -- Max. 5.5 0 VCC + 0.5*1 0.8 Unit V V V V
Notes : *1. The input voltage is VCC + 2.0 V when the pulse width is less than 20 ns (the pulse width is with respect to the point at which VCC is applied). *2. The input voltage is VSS - 2.0 V when the pulse width is less than 20 ns (the pulse width is with respect to the point at which VSS is applied). Capacitance
(VCC = 5 V 10%, Ta = 25C, f = 1 MHz) Parameter Input Capacitance (A0 - A9) Input Capacitance (RAS, LCAS, UCAS, WE, OE) Output Capacitance (DQ1 - DQ16) Symbol CIN1 CIN2 CI/O Typ. -- -- -- Max. 5 7 7 Unit pF pF pF
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Semiconductor DC Characteristics
Parameter Output High Voltage Output Low Voltage Input Leakage Current
Symbol
MSM5118160B
(VCC = 5 V 10%, Ta = 0C to 70C) Condition MSM5118160 MSM5118160 MSM5118160 B-50 B-60 B-70 Unit Note Min. VOH IOH = -5.0 mA VOL IOL = 4.2 mA 0 V VI 6.5 V; ILI All other pins not under test = 0 V DQ disable 0 V VO 5.5 V RAS, CAS cycling, tRC = Min. RAS, CAS = VIH RAS, CAS VCC -0.2 V RAS cycling, ICC3 CAS = VIH, tRC = Min. RAS = VIH, ICC5 CAS = VIL, DQ = enable ICC6 RAS cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tPC = Min. -- 170 -- 150 -- 130 mA 1, 3 -- 180 -- 160 -- 140 mA 1, 2 -- 5 -- 5 -- 5 mA 1 -- 180 -- 160 -- 140 mA 1, 2 -10 10 -10 10 -10 10 mA 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 V V
Output Leakage Current Average Power Supply Current (Operating) Power Supply Current (Standby) Average Power Supply Current (RAS-only Refresh) Power Supply Current (Standby) Average Power Supply Current (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode)
ILO
-10
10
-10
10
-10
10
mA
ICC1
-- -- --
180 2 1
-- -- --
160 2 1
-- -- --
140 2
mA
1, 2
ICC2
mA 1
1
Notes : 1. ICC Max. is specified as ICC for output open condition. 2. The address can be changed once or less while RAS = VIL. 3. The address can be changed once or less while CAS = VIH.
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Semiconductor AC Characteristics (1/2)
MSM5118160B
(VCC = 5 V 10%, Ta = 0C to 70C) Note 1, 2, 3 Parameter Random Read or Write Cycle Time Read Modify Write Cycle Time Fast Page Mode Cycle Time Fast Page Mode Read Modify Write Cycle Time Access Time from RAS Access Time from CAS Access Time from Column Address Access Time from CAS Precharge Access Time from OE Output Low Impedance Time from CAS CAS to Data Output Buffer Turn-off Delay Time OE to Data Output Buffer Turn-off Delay Time Transition Time Refresh Period RAS Precharge Time RAS Pulse Width RAS Pulse Width (Fast Page Mode) RAS Hold Time RAS Hold Time referenced to OE CAS Precharge Time (Fast Page Mode) CAS Pulse Width CAS Hold Time CAS to RAS Precharge Time RAS Hold Time from CAS Precharge RAS to CAS Delay Time RAS to Column Address Delay Time Row Address Set-up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time Column Address to RAS Lead Time Read Command Set-up Time Read Command Hold Time Read Command Hold Time referenced to RAS
Symbol
MSM5118160 MSM5118160 MSM5118160 B-60 B-50 B-70 Unit Note Min. Max. -- -- -- -- 50 13 25 30 13 -- 13 13 50 16 -- 10,000
100,000
Min. 110 155 40 85 -- -- -- -- -- 0 0 0 3 -- 40 60 60 15 15 10 15 60 5 35 20 15 0 10 0 10 30 0 0 0
Max. -- -- -- -- 60 15 30 35 15 -- 15 15 50 16 -- 10,000
100,000
Min. 130 185 45 100 -- -- -- -- -- 0 0 0 3 -- 50 70 70 20 20 10 20 70 5 40 20 15 0 10 0 15 35 0 0 0
Max. -- -- -- -- 70 20 35 40 20 -- 20 20 50 16 -- 10,000
100,000
tRC tRWC tPC tPRWC tRAC tCAC tAA tCPA tOEA tCLZ tOFF tOEZ tT tREF tRP tRAS tRASP tRSH tROH tCP tCAS tCSH tCRP tRHCP tRCD tRAD tASR tRAH tASC tCAH tRAL tRCS tRCH tRRH
90 131 35 76 -- -- -- -- -- 0 0 0 3 -- 30 50 50 13 13 7 13 50 5 30 17 12 0 7 0 7 25 0 0 0
ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 11 11 11 8, 11 8 12 12 5 6 14 4, 5, 6 4, 5 4, 6 4, 12 4 4 7 7 3
-- -- -- 10,000 -- -- -- 37 25 -- -- -- -- -- -- -- --
-- -- -- 10,000 -- -- -- 45 30 -- -- -- -- -- -- -- --
-- -- -- 10,000 -- -- -- 50 35 -- -- -- -- -- -- -- --
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Semiconductor AC Characteristics (2/2)
MSM5118160B
(VCC = 5 V 10%, Ta = 0C to 70C) Note 1, 2, 3 Parameter Write Command Set-up Time Write Command Hold Time Write Command Pulse Width OE Command Hold Time Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Set-up Time Data-in Hold Time OE to Data-in Delay Time CAS to WE Delay Time Column Address to WE Delay Time RAS to WE Delay Time CAS Precharge WE Delay Time CAS Active Delay Time from RAS Precharge RAS to CAS Set-up Time (CAS before RAS) RAS to CAS Hold Time (CAS before RAS)
Symbol
MSM5118160 MSM5118160 MSM5118160 B-50 B-60 B-70 Unit Note Min. Max. Min. 0 10 10 15 15 15 0 10 15 40 55 85 60 5 10 10 Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Min. 0 15 10 20 20 20 0 15 20 50 65 100 70 5 10 10 Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 13 10, 11 10, 11 9 9 9 9 11 11 12 9, 11 11 0 7 7 13 13 13 0 7 13 36 48 73 53 5 10 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
tWCS tWCH tWP tOEH tRWL tCWL tDS tDH tOED tCWD tAWD tRWD tCPWD tRPC tCSR tCHR
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Semiconductor Notes:
MSM5118160B
1. A start-up delay of 200 s is required after power-up, followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. 2. The AC characteristics assume tT = 5 ns. 3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT) are measured between VIH and VIL. 4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF. 5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, then the access time is controlled by tCAC. 6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, then the access time is controlled by tAA. 7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. 8. tRCH or tRRH must be satisfied for a read cycle. 9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS tWCS (Min.), then the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD tCWD (Min.) , tRWD tRWD (Min.), tAWD tAWD (Min.) and tCPWD tCPWD (Min.), then the cycle is a read modify write cycle and data out will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, then the condition of the data out (at access time) is indeterminate. 10. These parameters are referenced to the UCAS and LCAS, leading edges in an early write cycle, and to the WE leading edge in an OE control write cycle, or a read modify write cycle. 11. These parameters are determined by the falling edge of either UCAS or LCAS, whichever is earlier. 12. These parameters are determined by the rising edge of either UCAS or LCAS, whichever is later. 13. tCWL should be satisfied by both UCAS and LCAS. 14. tCP is determined by the time both UCAS and LCAS are high.
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E2G0091-17-41D Semiconductor MSM5118160B
Write Cycle (Early Write)
,,, , ,,,,
TIMING WAVEFORM
Read Cycle
tRC tRAS tRP VIH - RAS VIL - tCRP tCRP tCSH tRCD CAS VIH - VIL - tRAD tRSH tCAS tRAL tASR tRAH tASC tCAH Address VIH - VIL - VIH - VIL - VIH - VIL - VOH - Row Column tRCS tRRH tRCH WE OE tAA tROH tOEA tRAC tCAC tOEZ tOFF DQ VOL - Open Valid Data-out tCLZ "H" or "L"
tRC
tRAS
tRP
RAS
VIH - VIL -
tCRP
tCRP
tCSH
tRCD
tRSH
VIH - CAS VIL - VIH - VIL - VIH -
tRAD tRAH
tCAS
tASR
tASC
tCAH
tRAL
Address
Row
Column
tWCS
tWCH tWP
tCWL
WE
VIL - VIH -
tRWL
OE
VIL - VIH -
tDS
tDH
DQ
VIL -
Valid Data-in
Open
"H" or "L"
9/16
,,,
Semiconductor MSM5118160B Read Modify Write Cycle
tRWC tRAS tRP RAS VIH - VIL - tCSH tCRP tCRP tRCD tRSH VIH - CAS VIL - tCAS tASR tRAH tASC tCAH VIH - Address VIL - VIH - VIL - VIH - VIL - VI/OH- Row Column tRAD tRWD tCWD WE OE tAA tAWD tCWL tRWL tWP tRCS tOEA tOED tOEH tCAC tRAC tOEZ tDS tDH DQ VI/OL- tCLZ Valid Data-out Valid Data-in "H" or "L"
10/16
, ,, , , ,,
Semiconductor MSM5118160B Fast Page Mode Read Cycle
tRASP tRP VIH - RAS V - IL VIH - CAS VIL - VIH - VIL - VIH - VIL - tRHCP tCRP tRCD tPC tRSH tCRP tCP tCP tRAD tCAS tCAS tCAS tASR tRAH tASC tCSH tCAH tASC tCAH tASC tRAL tCAH Address Row Column Column Column tRCS tRCH tRCS tAA tRCH tRCS tAA tRCH WE tAA tRRH VIH - OE VIL - VOH - VOL - tOEA tCPA tCPA tOEA tOEA tCAC tOFF tCAC tOFF tCAC tOFF tRAC tOEZ tCLZ tOEZ tCLZ tOEZ DQ tCLZ
Valid Data-out Valid Data-out Valid Data-out
"H" or "L"
Fast Page Mode Write Cycle (Early Write)
tRASP tPC
tRP
VIH - RAS V - IL VIH - CAS VIL - VIH - VIL -
tRHCP
tCRP
tRCD
tRSH
tCRP
tCAS
tCP
tCP
tCAS
tCAS
tASR
tRAH tASC tRAD
tCSH tCAH
tASC
tCAH
tASC
tCAH
tRAL
Address
Row
tWCS
VIH - WE VIL -
Column tCWL tWCH tWP
Column tCWL tWCS tWCH tWP
Column tRWL tCWL tWCS tWCH tWP tDS tDH
tDS
tDH
tDS
tDH
DQ
VIH - VIL -
Valid Data-in
Valid Data-in
Valid Data-in
Note: OE = "H" or "L"
"H" or "L"
11/16
Semiconductor
Fast Page Mode Read Modify Write Cycle
VIH - RAS VIL -
VIH - CAS VIL -
Address
VIH - VIL -
V WE IH - VIL -
VIH - OE V - IL VI/OH- VI/OL -
DQ
RAS-Only Refresh Cycle
RAS
VIH - VIL -
CAS
VIH - VIL -
Address
VIH - VIL -
DQ
VOH - VOL -
,,,, , , ,
tRASP tRP tCSH tPRWC tRCD tCAS tCP tCAS tCP tRSH tCAS tCRP tRAD tRAH tCAH tASC tASC tASR tASC tCAH tCAH tRAL Row Column tRWD Column Column tRCS tCWD tCWL tRCS tCPWD tCWD tAWD tCWL tRCS tCPWD tCWD tAWD tRWL tCWL tAWD tRAC tDS tWP tDH tDS tWP tDH tROH tDS tWP tDH tAA tCPA tAA tCPA tAA tOEA tOEA tOEA tOED tOED tOED tCAC tOEZ tCAC tOEZ
In
MSM5118160B
tCAC
tOEZ
Out
In
Out
Out
In
tCLZ
tCLZ
tCLZ
"H" or "L"
tRC
tRAS
tRP
tCRP
tRPC
tASR
tRAH
Row
tOFF
Open
Note: WE, OE = "H" or "L"
"H" or "L"
12/16
CAS before RAS Refresh Cycle
Hidden Refresh Read Cycle
,, ,,,
Semiconductor MSM5118160B
tRC tRP tRAS tRP RAS VIH - VIL - tRPC tRPC tCP tCSR tCHR CAS VIH - VIL - VOH - VOL - tOFF DQ Open Note: WE, OE, Address = "H" or "L" "H" or "L" tRC tRC tRAS tRP tRAS tRP RAS VIH - VIL - VIH - VIL - tCRP tRCD tRSH tCHR CAS tASR tRAD tASC tRAH tCAH Address VIH - VIL - Row Column tRCS tRAL tRRH VIH - WE V IL - VIH - OE V IL - tAA tROH tOEA tRAC DQ VOH - VOL - tCAC tCLZ Valid Data-out "H" or "L" tOFF tOEZ
13/16
Semiconductor
Hidden Refresh Write Cycle
,,, ,
MSM5118160B
tRC tRC tRAS tRP tRAS tRP RAS VIH - VIL - VIH - tCRP tRCD tRSH tCHR CAS VIL - tASR tRAD tASC tRAH tCAH t RAL Address VIH - VIL - Row Column tWCS tWCH VIH - WE V - IL VIH - OE V IL - VIH - VIL - tWP tDS tDH DQ Valid Data-in "H" or "L"
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Semiconductor
MSM5118160B
PACKAGE DIMENSIONS
(Unit : mm)
SOJ42-P-400-1.27
Mirror finish
Package material Lead frame material Pin treatment Solder plate thickness Package weight (g)
Epoxy resin 42 alloy Solder plating 5 mm or more 1.86 TYP.
Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times).
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Semiconductor
MSM5118160B
(Unit : mm)
TSOPII50/44-P-400-0.80-K
Mirror finish
Package material Lead frame material Pin treatment Solder plate thickness Package weight (g)
Epoxy resin 42 alloy Solder plating 5 mm or more 0.60 TYP.
Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times).
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